Electronic Evolution at the C₆₀/α-RuCl₃ Interface: Exploring a Hole Doping Scenario
We present a unified model of the electronic evolution at the C₆₀/RuCl₃ interface, constructed from systematic photoemission studies of core levels, valence band, and work function as a function of C₆₀ coverage. The data support a two-step mechanism governing interfacial physics: immediate interfacial dipole formation & long-range screening effect
Authors
- E. Tikhodeeva
- О. В. Молодцова (ORCID: https://orcid.org/0000-0001-6321-758X)
- Dmitrii V. Potorochin (ORCID: https://orcid.org/0000-0003-4239-5293)
- С. Л. Молодцов
- A. Koitzsch (ORCID: https://orcid.org/0000-0002-9837-7820)
- Marieke Stapf (ORCID: https://orcid.org/0000-0002-7643-0109)
- Martin Knupfer
- Wolfgang Eberhardt
- Victor Aristov
- Friedrich Roth
Publication Details
- Journal
- European XFEL Publication Database
- Published
- 2025-09-23
- Primary Topic
- Electronic and Structural Properties of Oxides
- Type
- article
- Field-Weighted Citation Impact
- 0.00