Research and Development of Gd-doped Al/Gd/Y2O3/Si/Al MOS-based Nuclear Radiation Detectors

<span lang="TR" style="font-size: 11pt; line-height: 16.8667px; font-family: Calibri, sans-serif; color: rgb(34, 34, 34);">Optimizing the gate dielectric's radiation response is critical for enhancing the sensitivity and performance of radiation sensors. This study explores the effects of gamma irradiation on the electrical characteristics of Al/Gd/Y₂O₃/n-Si/Al MOS capacitors. These capacitors are fabricated with a stacked gate oxide layer containing Gadolinium (Gd) and Yttrium Oxide (Y₂O₃), grown on an n-type Silicon(n-Si) substrate via thermal oxidation and electron beam evaporation techniques. The aluminum gate and back contacts were deposited using thermal evaporation. The impact of gamma irradiation was assessed through Capacitance-Voltage (C-V), Conductance-Voltage (G-V), and Current Density-Voltage (J-V) measurements. Additionally, the interface state and oxide trap charge densities were evaluated from mid-gap to flat-band points based on the C-V curves for in-depth analysis. The results indicate that interfacial layers, likely responsible for forming interfacial dipoles, play a key role in reducing interface trap and oxide trap charge densities, enhancing the device's charge storage capacity. these improvements significantly enhanced the radiation sensitivities of the devices.</span><span style="font-size: medium;"></span><br>