Analysis and Mitigation of Inductor Oscillation and Bridge Midpoint Voltage Imbalance in a GaN-Based Boost-HERIC Topology PV Inverter

With the rapid development of distributed photovoltaic (PV) systems, the boost-HERIC inverter topology has gained increasing adoption due to its superior voltage regulation and current control capability. In recent years, wide-bandgap devices such as GaN HEMTs have been extensively applied in PV inverters owing to their high switching speed and low conduction loss, thereby enabling higher power density and improved efficiency. However, in boost-HERIC systems, the fast switching operations of GaN HEMTs also introduce new challenges, including inductor current oscillation and bridge midpoint voltage imbalance. This paper investigates the underlying mechanisms of these issues and proposes corresponding mitigation strategies. A simulation model is developed to verify the effectiveness of the proposed methods, thereby providing theoretical guidance for the optimization of GaN-based PV grid-connected systems.

Authors

Institutions

Publication Details

Published
2025-11-07
DOI
https://doi.org/10.1109/peas66638.2025.11403226
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Analysis and Mitigation of Inductor Oscillation and Bridge Midpoint Voltage Imbalance in a GaN-Based Boost-HERIC Topology PV Inverter

Po Xu, Yuxuan Wang, Kang Wang, Feng Jiang et al.
Silicon Carbide Semiconductor Technologies
article

Analysis and Mitigation of Inductor Oscillation and Bridge Midpoint Voltage Imbalance in a GaN-Based Boost-HERIC Topology PV Inverter

Po Xu, Yuxuan Wang, Kang Wang, Feng Jiang, Xibo Yuan, Yonglei Zhang, Wenzhi Zhou, Kefang Zheng
article en

Abstract

With the rapid development of distributed photovoltaic (PV) systems, the boost-HERIC inverter topology has gained increasing adoption due to its superior voltage regulation and current control capability. In recent years, wide-bandgap devices such as GaN HEMTs have been extensively applied in PV inverters owing to their high switching speed and low conduction loss, thereby enabling higher power density and improved efficiency. However, in boost-HERIC systems, the fast switching operations of GaN HEMTs also introduce new challenges, including inductor current oscillation and bridge midpoint voltage imbalance. This paper investigates the underlying mechanisms of these issues and proposes corresponding mitigation strategies. A simulation model is developed to verify the effectiveness of the proposed methods, thereby providing theoretical guidance for the optimization of GaN-based PV grid-connected systems.

University of Nottingham Ningbo China (CN), China University of Mining and Technology (CN), Coventry University (GB)
Climate action
Openalex Percentile: Top 35%
Silicon Carbide Semiconductor Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Analysis and Mitigation of Inductor Oscillation and Bridge Midpoint Voltage Imbalance in a GaN-Based Boost-HERIC Topology PV Inverter — Po Xu, Yuxuan Wang, et al. · (2025) | TGRS Research Map | TGRS