Life Cycle Assessment of Epitaxy of GaN-on-SiC High-Electron-Mobility Transistors for Advanced Radio Frequency Applications

From 4G to 5G to 6G, every few years, a new generation of data transmission technology emerges to meet the growing demand for faster and more efficient communication. Artificial intelligence, the Internet of Things and the increasing need for global connectivity are the key drivers of this evolution, pushing both research and industry toward ever-higher data rates. These advanced technologies already consume vast amounts of resources and energy, relying on high-tech nano-fabrication processes such as metal–organic chemical vapor deposition, dry etching, deposition and lithography, all of which typically occur in energy-intensive cleanroom environments. This study evaluates the epitaxy process of GaN on SiC for high-electron-mobility transistor (HEMT) devices and integrated circuits using life cycle assessment. GaN HEMTs offer high efficiency and excellent thermal conductivity, paving the way for reduced chip footprints for lower energy consumption. This analysis enables informed decision-making regarding sustainability by providing detailed data and interpretation of Fraunhofer IAF’s GaN-on-SiC HEMT technology.