Flexible and Stretchable UV‐B Light‐Emitting Diodes

Nanostructured ultraviolet light sources operating in the UV-B spectral range (280-325 nm) are critical for dermatological therapy, horticulture, disinfection, and wearable optoelectronics. This work presents the first elastic UV-B light-emitting diode membranes based on GaN microwires with a core-shell AlGaN/GaN active region, addressing both optical efficiency and flexibility challenges. Microwires were grown on sapphire, encapsulated into polydimethylsiloxane, and integrated with two types of electrodes based on the patterned films of single-walled carbon nanotubes and silver nanowires. The proposed single walled carbon nanotubes -based elastic electrodes maintain initial resistivity at 10% biaxial stretching. The device emits in the UV-B range at 307-321 nm under bias, achieving a current density of ∼3.9 A/cm<sup>2</sup> at 18 V. The developed light-emitting diodes retain functionality under bending and 10% stretching, with a minimal spectral shift (<3 nm) and stable I-V characteristics, making it suitable for UV-B elastic applications.

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Publication Details

Journal
Small
Published
2026-02-26
DOI
https://doi.org/10.1002/smll.202514206
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
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article

Flexible and Stretchable UV‐B Light‐Emitting Diodes

C. Durand, Sylvain Finot, F. Julien, Fedor M. Kochetkov et al.
Small
GaN-based semiconductor devices and materials
article

Flexible and Stretchable UV‐B Light‐Emitting Diodes

C. Durand, Sylvain Finot, F. Julien, Fedor M. Kochetkov, Lucie Valéra, Vincent Grenier, Albert G. Nasibulin, Gwénolé Jacopin, R Vigoa Hernández, Diana E. Kolesina, A. A. Pavlov, Dmitry V Krasnikov, Ivan S Mukhin, Alexander Vorobyev, Ekaterina Nikitina
article en

Abstract

Nanostructured ultraviolet light sources operating in the UV-B spectral range (280-325 nm) are critical for dermatological therapy, horticulture, disinfection, and wearable optoelectronics. This work presents the first elastic UV-B light-emitting diode membranes based on GaN microwires with a core-shell AlGaN/GaN active region, addressing both optical efficiency and flexibility challenges. Microwires were grown on sapphire, encapsulated into polydimethylsiloxane, and integrated with two types of electrodes based on the patterned films of single-walled carbon nanotubes and silver nanowires. The proposed single walled carbon nanotubes -based elastic electrodes maintain initial resistivity at 10% biaxial stretching. The device emits in the UV-B range at 307-321 nm under bias, achieving a current density of ∼3.9 A/cm<sup>2</sup> at 18 V. The developed light-emitting diodes retain functionality under bending and 10% stretching, with a minimal spectral shift (<3 nm) and stable I-V characteristics, making it suitable for UV-B elastic applications.

Small
Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), ITMO University (RU), Peter the Great St. Petersburg Polytechnic University (RU), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Federal Almazov North-West Medical Research Centre (RU), CEA Grenoble (FR), Centre de Nanosciences et de Nanotechnologies (FR), Institut Néel (FR), Kemerovo State University (RU), Université Grenoble Alpes (FR)
Openalex Percentile: Top 41%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
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