Electronic properties of g-GaN/MoS

Inspired by the unique features of two-dimensional materials, herein, we mainly focus on exploring the g-GaN/MoS2 heterostructure by stacking engineering. The g-GaN/MoS2 heterostructure induces interlayer polarization, regulates the electronic properties of photoexcited carriers and significantly suppresses the exciton recombination. The suitable band edge position and appropriate ability of carrier separation as well as transfer render it the candidate for photocatalytic water splitting. Especially, it is effective to tune the related properties including band structures, dipole moment, surface potential difference, dipole-induced built-in electric field and absorption as well as photocatalytic activity via interlayer distance and biaxial strain. Our work might provide the guidance for further designing brand novel photocatalytic two-dimensional materials with distinguished optical absorption and efficient carrier separation.