Electric-Field Modulation of Trap-Induced Energy Barriers at Single-Grain Boundaries in Monolayer C ₁₀ -DNTT Transistors

Energy fluctuations caused by traps within organic semiconductor films present a significant challenge to intrinsic charge transport, severely impairing the efficiency, stability, and uniformity of organic electronic devices. Here, we propose a precise electric-field engineering strategy to actively modulate trap-induced localized energy barriers, thereby improving the charge transport in organic thin-film transistors (OTFTs). Our results demonstrate that charge transport in monolayer C₁₀-DNTT polycrystals is highly sensitive to the applied electric field. By increasing the lateral electric field, we effectively reduce the trap-induced barrier height to the thermal voltage level (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mfrac><mml:mrow><mml:msub><mml:mrow><mml:mi>k</mml:mi></mml:mrow><mml:mrow><mml:mi>B</mml:mi></mml:mrow></mml:msub><mml:mi>T</mml:mi></mml:mrow><mml:mrow><mml:mi>q</mml:mi></mml:mrow></mml:mfrac></mml:math>) and increase the carrier velocity by more than 2 orders of magnitude. We also demonstrate an OTFT array with mobility uniformity of 97.1%, as well as an enhancement-depletion mode amplifier featuring a voltage gain exceeding 3200 and power consumption below 0.5 nW. These performance metrics hold significant promise for applications in flexible amplifiers and ultralow-power analog circuits.