Polarization-Insensitive Electro-Optic Modulator for the Terahertz Regime Enabled by a Graphene-Hybrid Plasmonic Waveguide

A polarization-insensitive compact optical modulator based on a graphene-hybrid surface plasmon polariton waveguide is proposed. The inverted U-shaped structure enables the synchronous control of TE/TM modes via Fermi level tuning, achieving a maximum attenuation of 0.247 dB/μm (E<sub>f</sub> = 0.3 eV) and a minimum attenuation of 0.026-0.028 dB/μm (E<sub>f</sub> = 1.0 eV) at 3 THz, with a polarization-dependent modulation error of only 0.002 dB/μm. The 100 μm × 30 μm device operates effectively at 2.5 THz (120 μm), demonstrating its potential for integrated photonic circuits. Additionally, the proposed modulator is compatible with Complementary Metal-Oxide-Semiconductor (CMOS) technology. The excellent ultra-broadband modulation performance of the graphene-hybrid plasmonic waveguide (GHPW) thereby paves the way for high-speed communication, non-destructive testing, biomedical sensing and optical computing.

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Publication Details

Journal
Nanomaterials
Published
2026-02-25
DOI
https://doi.org/10.3390/nano16050288
Primary Topic
Plasmonic and Surface Plasmon Research
Type
article
Field-Weighted Citation Impact
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article

Polarization-Insensitive Electro-Optic Modulator for the Terahertz Regime Enabled by a Graphene-Hybrid Plasmonic Waveguide

Jianyu Pan, Caijing Liu, Yong Li, Xia Zhou et al.
Nanomaterials
Plasmonic and Surface Plasmon Research
article

Polarization-Insensitive Electro-Optic Modulator for the Terahertz Regime Enabled by a Graphene-Hybrid Plasmonic Waveguide

Jianyu Pan, Caijing Liu, Yong Li, Xia Zhou, Qilong Tan, Tingting Weng, Xuguang Huang
article en

Abstract

A polarization-insensitive compact optical modulator based on a graphene-hybrid surface plasmon polariton waveguide is proposed. The inverted U-shaped structure enables the synchronous control of TE/TM modes via Fermi level tuning, achieving a maximum attenuation of 0.247 dB/μm (E<sub>f</sub> = 0.3 eV) and a minimum attenuation of 0.026-0.028 dB/μm (E<sub>f</sub> = 1.0 eV) at 3 THz, with a polarization-dependent modulation error of only 0.002 dB/μm. The 100 μm × 30 μm device operates effectively at 2.5 THz (120 μm), demonstrating its potential for integrated photonic circuits. Additionally, the proposed modulator is compatible with Complementary Metal-Oxide-Semiconductor (CMOS) technology. The excellent ultra-broadband modulation performance of the graphene-hybrid plasmonic waveguide (GHPW) thereby paves the way for high-speed communication, non-destructive testing, biomedical sensing and optical computing.

NanomaterialsVol. 16(5)
South China Normal University (CN), Institute of Semiconductors (CN)
Affordable and clean energy
Openalex Percentile: Top 45%
Plasmonic and Surface Plasmon Research
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