Safe and cost-effective mist CVD as a homoepitaxial growth technology to fabricate β-Ga₂O₃ RF MESFETs

Attempts were made to use mist CVD for the fabrication of β-Ga₂O₃ RF MESFETs. For a device with a gate length and width of L[G] = 0.45 μm and W[G] = 150 μm, respectively, the current gain cut-off frequency (f[T]) and the maximum oscillation frequency (f[max]) were 8.3 GHz and 18.4 GHz, respectively, and the electron velocity was calculated to be 2.3 × 10⁶ cm s⁻¹. These values are comparable to those of other reported devices, suggesting the potential of mist CVD as a safe and cost-effective growth technology for RF devices.