InP/InGaAs-Based Avalanche Photodiodes for Single-Photon Detectors in the 1550 nm Spectral Range

The paper presents the results of investigating the static characteristics of avalanche photodiodes (APD) fabricated from an InP/InGaAs heterostructure grown by metal organic vapor phase epitaxy, followed by single-stage zinc diffusion from a metal organic source of diethylzinc. The fabricated APDs have demonstrated at room temperature a breakdown voltage of 53 V, dark currents of maximum 0.7 nA, and a capacitance of 0.55 pF at 0.9 times the breakdown voltage. The spectral sensitivity of the fabricated APD was at least 0.8 A/W at a wavelength of 1550 nm. The temperature coefficient of the APD breakdown voltage was 85 mV/K.

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Publication Details

Journal
Bulletin of the Lebedev Physics Institute
Published
2025-12-01
DOI
https://doi.org/10.3103/s1068335625603905
Primary Topic
Advanced Optical Sensing Technologies
Type
article
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article

InP/InGaAs-Based Avalanche Photodiodes for Single-Photon Detectors in the 1550 nm Spectral Range

Ya. N. Kovach, S. A. Blokhin, A. A. Marmalyuk, E. V. Nikitina et al.
Bulletin of the Lebedev Physics Institute
Advanced Optical Sensing Technologies
article

InP/InGaAs-Based Avalanche Photodiodes for Single-Photon Detectors in the 1550 nm Spectral Range

Ya. N. Kovach, S. A. Blokhin, A. A. Marmalyuk, E. V. Nikitina, R. V. Levin, I. V. Yarotskaya, D. S. Papylev, A. I. Baranov, L. Ya. Karachinsky, N. A. Maleev, M. A. Ladugin, K. O. Voropaev, P. E. Kopytov, V. V. Andryushkin, I. I. Novikov, A. Yu. Andreev, A. F. Tsatsul’nikov
article en

Abstract

The paper presents the results of investigating the static characteristics of avalanche photodiodes (APD) fabricated from an InP/InGaAs heterostructure grown by metal organic vapor phase epitaxy, followed by single-stage zinc diffusion from a metal organic source of diethylzinc. The fabricated APDs have demonstrated at room temperature a breakdown voltage of 53 V, dark currents of maximum 0.7 nA, and a capacitance of 0.55 pF at 0.9 times the breakdown voltage. The spectral sensitivity of the fabricated APD was at least 0.8 A/W at a wavelength of 1550 nm. The temperature coefficient of the APD breakdown voltage was 85 mV/K.

Bulletin of the Lebedev Physics InstituteVol. 52(S9)
Russian Academy of Sciences (RU), Saint Petersburg Academic University (RU), ITMO University (RU), Polyus Research Institute of M.F.Stelmakh (Russia) (RU), Submicron Heterostructures for Microelectronics Research and Engineering Center (RU), Ioffe Institute (RU), Yaroslav-the-Wise Novgorod State University (RU)
Openalex Percentile: Top 27%
Advanced Optical Sensing Technologies
DOISourceOpenAlex
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