Field plate multi-finger diamond MOSFET with ampere-class current capability and a breakdown voltage of 550 V

Abstract The field plate structure is an effective technique for improving breakdown characteristics. In this work, the gate field plate (GFP) diamond MOSFET with both ampere-class current capability and high breakdown voltage is demonstrated for the first time. The maximum drain current of the fabricated device was 0.82 A with a breakdown voltage of 550 V. From the double pulse test, the rise time and fall time are 56 ns and 15 ns, respectively, even at a supply voltage of −200 V and a drain current of 1 A. These results indicate that a diamond MOSFET is promising for power devices.