An LOFIC Image Sensor Readout Circuit with an On-Chip HDR Merger Achieving 36.5% Area and 14.9% Power Reduction

For sensing applications, a complementary metal oxide semiconductor (CMOS) image sensor (CIS) with a lateral overflow integration capacitor (LOFIC) is in high demand. The LOFIC CIS can achieve high-dynamic-range (HDR) imaging by combining a low-conversion-gain (LCG) signal for large maximum signal electrons and a high-conversion-gain (HCG) signal for a low electron-referred noise floor. However, the LOFIC CIS faces challenges regarding the power consumption and circuit area when reading both HCG and LCG signals. To address these issues, this study proposes a readout circuit composed of area-efficient MOS capacitors using a folding DC operating point technique and an in-column signal selector for an on-chip HDR merger of HCG and LCG signals. A 10-bit test chip was fabricated with a 0.18 µm CMOS process with MOS capacitors. The fabricated chip maintains high linearity, achieving an integral nonlinearity (INL) of +7.17/−6.93 LSB for the HCG signal and +7.95/−7.41 LSB for the LCG signal. Furthermore, the proposed design achieves a 14.92% reduction in the average power consumption of the total readout circuit and a 36.5% reduction in the readout circuit area.