Field-Symmetry-Engineered Magnetotransport in Magnetic NiO/Co/Pt Heterostructures

Our study demonstrates bidirectional and reversible electrical conversion between asymmetric and symmetric magnetoresistance in NiO/Co/Pt heterostructures via magnetic field-symmetry engineering. We show that field symmetry directly dictates the emergent magnetoresistance symmetry, enabling programmable room-temperature switching among asymmetric, forward-symmetric, and reverse-symmetric configurations. This reconfigurability originates from a polarity-selective, half-field mirror inversion of resistance spikes under symmetry breaking, governed by the field-dependent reconfiguration of the rotation sequence between interfacial and bulk cobalt magnetic moments. The work establishes a novel approach to directly tailor magnetoresistance by manipulating field symmetry without altering the underlying spin transport physics, providing a prototypical platform for field-programmable spintronic devices.

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Publication Details

Journal
Nano Letters
Published
2026-02-23
DOI
https://doi.org/10.1021/acs.nanolett.6c00125
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
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article

Field-Symmetry-Engineered Magnetotransport in Magnetic NiO/Co/Pt Heterostructures

L. Yan, Hui Xu, Wenbo Zhang, Fanyu Meng et al.
Nano Letters
Magnetic properties of thin films
article

Field-Symmetry-Engineered Magnetotransport in Magnetic NiO/Co/Pt Heterostructures

L. Yan, Hui Xu, Wenbo Zhang, Fanyu Meng, Jiafeng Feng, Xiaoying Han, Muhammad Waqas Nafees, Ubaid Raza, Yi Wang, Yaowen Liu
article en

Abstract

Our study demonstrates bidirectional and reversible electrical conversion between asymmetric and symmetric magnetoresistance in NiO/Co/Pt heterostructures via magnetic field-symmetry engineering. We show that field symmetry directly dictates the emergent magnetoresistance symmetry, enabling programmable room-temperature switching among asymmetric, forward-symmetric, and reverse-symmetric configurations. This reconfigurability originates from a polarity-selective, half-field mirror inversion of resistance spikes under symmetry breaking, governed by the field-dependent reconfiguration of the rotation sequence between interfacial and bulk cobalt magnetic moments. The work establishes a novel approach to directly tailor magnetoresistance by manipulating field symmetry without altering the underlying spin transport physics, providing a prototypical platform for field-programmable spintronic devices.

Nano LettersVol. 26(9)
Tongji University (CN), Chinese Academy of Sciences (CN), Dalian University of Technology (CN), Materials Modification (United States) (US), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), National Laboratory for Superconductivity (CN), University of Chinese Academy of Sciences (CN)
Openalex Percentile: Top 44%
Magnetic properties of thin films
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