Integration of Polarization Sensing, Memory, and Logic in a Crystal-Axis-Aligned Oxygen-Intercalated Transistor

The rapid development of data-centric applications requires the removal of interfaces between sensing, memory, and computing units to maximize system efficiency. Here, we report the direct integration of polarization-resolved photodetection, photocurrent memory, and optoelectronic logic within one transistor architecture. The transistor, termed the COT (crystal-axis-aligned oxygen-intercalated transistor), employs anisotropic PdSe₂ as the contacts and anisotropic ReS₂ as the channel with crystal-axis-aligned stacking to maximize polarization sensitivity, while introducing a nanoscale oxygen-trapping layer beneath the channel for persistent photocurrent memory. The synergistic photoresponse in the contacts and channel yields an ultrahigh responsivity of 5.2 × 10⁷ A W^-1 and a specific detectivity of 7.8 × 10¹⁵ cm Hz^1/2 W^-1. The confined oxygen enables an ultralong retention time of 6 × 10⁴ s and 33 memory states. Due to the high polarization sensitivity, the device can further use different polarization vectors to realize reconfigurable optoelectronic logic gates, such as wavelength-tunable AND and OR.