Applications and Implications of Wide-Bandgap Technologies in Microgrids: A Review
The next evolution in power electronics is being driven by wide-bandgap materials—particularly silicon carbide and gallium nitride power semiconductor devices—which increase efficiency and power density, thus ensuring their integration into high-performance systems. One system poised to receive benefits from this progression is microgrids. This paper reviews common microgrid architectures, components, voltage and power levels, and power electronics to establish where wide-bandgap materials, specifically silicon carbide and gallium nitride, may benefit current and future microgrids.
Authors
- Ramesh Rayudu (ORCID: https://orcid.org/0000-0001-9290-2447)
- Alan C. Brent (ORCID: https://orcid.org/0000-0003-3769-4512)
- Daniel Burmester (ORCID: https://orcid.org/0000-0003-4032-685X)
Institutions
- Victoria University of Wellington (NZ)
Publication Details
- Journal
- Energies
- Published
- 2026-02-24
- DOI
- https://doi.org/10.3390/en19051126
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00