Precision Local Strain Engineering in 2D Semiconductors and Their van der Waals Heterostructures

Two-dimensional (2D) semiconductors and their van der Waals (vdW) heterostructures are readily tuned by strain, an approach known as straintronics, owing to their atomically thin, vdW-bonded layered structures. Small external or environmental perturbations induce strain in adjacent 2D semiconductors, yet sustaining large elastic deformations without fracture. This makes strain a uniquely powerful lever for reconfiguring lattice structure and deterministically tuning band structure, carrier transport, and excitonic responses. In this review, we survey experimental methodologies for quantifying and mapping local strain in 2D semiconductors, and summarize state-of-the-art strategies for imparting strain, including substrate-mediated deformation, patterned stressors, and interlayer-interaction-driven strain in stacked vdW heterostructures. Building on these foundations, we discuss how advances in precise local strain control are informing new device concepts and outline pathways for integrating strain programmability into scalable architectures. We conclude by identifying key challenges and opportunities toward robust, wafer-compatible deployment of local strain engineering in 2D semiconductor technologies.

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Publication Details

Journal
Small
Published
2026-02-23
DOI
https://doi.org/10.1002/smll.202512902
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

Precision Local Strain Engineering in 2D Semiconductors and Their van der Waals Heterostructures

B. Kim, Gwan-Hyoung Lee, Yoona Kim
Small
2D Materials and Applications
article

Precision Local Strain Engineering in 2D Semiconductors and Their van der Waals Heterostructures

B. Kim, Gwan-Hyoung Lee, Yoona Kim
article en

Abstract

Two-dimensional (2D) semiconductors and their van der Waals (vdW) heterostructures are readily tuned by strain, an approach known as straintronics, owing to their atomically thin, vdW-bonded layered structures. Small external or environmental perturbations induce strain in adjacent 2D semiconductors, yet sustaining large elastic deformations without fracture. This makes strain a uniquely powerful lever for reconfiguring lattice structure and deterministically tuning band structure, carrier transport, and excitonic responses. In this review, we survey experimental methodologies for quantifying and mapping local strain in 2D semiconductors, and summarize state-of-the-art strategies for imparting strain, including substrate-mediated deformation, patterned stressors, and interlayer-interaction-driven strain in stacked vdW heterostructures. Building on these foundations, we discuss how advances in precise local strain control are informing new device concepts and outline pathways for integrating strain programmability into scalable architectures. We conclude by identifying key challenges and opportunities toward robust, wafer-compatible deployment of local strain engineering in 2D semiconductor technologies.

Small
Seoul National University (KR)
Openalex Percentile: Top 47%
2D Materials and Applications
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