Improved capabilities of the TurboGAP code for radiation induced cascade simulations: An illustration with silicon

TurboGAP is a software package designed for efficient molecular dynamics simulations using Gaussian approximation potential (GAP) machine-learning interatomic potentials (MLIP). In this work, we enhance the capabilities of TurboGAP for radiation damage simulations by implementing a two-temperature molecular dynamics model, based on electron density-dependent coupling of electronic and atomic subsystems. Additionally, we implement adaptive calculation of the timestep and grouping of atoms for cell-border cooling. Our implementation incorporates electronic stopping power either through a traditional friction-based model or a more realistic first-principles-derived model. By combining the computational efficiency of TurboGAP with the accuracy of GAP MLIP, we perform cascade simulations in silicon with primary knock-on atom (PKA) energies up to 10 keV. Our simulations scale to systems containing up to 1 million atoms. We study the generation and clustering of radiation-induced defects. We also calculate ion-beam mixing and compare our results with the experimental data, discussing how the GAP-MLIP along with the inclusion of a realistic electronic stopping model affects the prediction of experimental mixing values. • Implemented two-temperature molecular dynamics in the TurboGAP code. • Implemented adaptive timestep and selective grouping of atoms to the TurboGAP code. • Implemented two electronic stopping models to the TurboGAP code. • Simulated up to 10 keV PKA cascades in Si using systems up to 1 million atoms. • Improved ion-beam mixing predictions in Si are reported.

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Publication Details

Journal
Computational Materials Science
Published
2026-02-23
DOI
https://doi.org/10.1016/j.commatsci.2026.114560
Primary Topic
Radiation Effects in Electronics
Type
article
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article

Improved capabilities of the TurboGAP code for radiation induced cascade simulations: An illustration with silicon

Ali Shirazi Hamedani, Andrea E. Sand, Uttiyoarnab Saha, Miguel A. Caro
Computational Materials Science
Radiation Effects in Electronics
article

Improved capabilities of the TurboGAP code for radiation induced cascade simulations: An illustration with silicon

Ali Shirazi Hamedani, Andrea E. Sand, Uttiyoarnab Saha, Miguel A. Caro
article en

Abstract

TurboGAP is a software package designed for efficient molecular dynamics simulations using Gaussian approximation potential (GAP) machine-learning interatomic potentials (MLIP). In this work, we enhance the capabilities of TurboGAP for radiation damage simulations by implementing a two-temperature molecular dynamics model, based on electron density-dependent coupling of electronic and atomic subsystems. Additionally, we implement adaptive calculation of the timestep and grouping of atoms for cell-border cooling. Our implementation incorporates electronic stopping power either through a traditional friction-based model or a more realistic first-principles-derived model. By combining the computational efficiency of TurboGAP with the accuracy of GAP MLIP, we perform cascade simulations in silicon with primary knock-on atom (PKA) energies up to 10 keV. Our simulations scale to systems containing up to 1 million atoms. We study the generation and clustering of radiation-induced defects. We also calculate ion-beam mixing and compare our results with the experimental data, discussing how the GAP-MLIP along with the inclusion of a realistic electronic stopping model affects the prediction of experimental mixing values. • Implemented two-temperature molecular dynamics in the TurboGAP code. • Implemented adaptive timestep and selective grouping of atoms to the TurboGAP code. • Implemented two electronic stopping models to the TurboGAP code. • Simulated up to 10 keV PKA cascades in Si using systems up to 1 million atoms. • Improved ion-beam mixing predictions in Si are reported.

Computational Materials ScienceVol. 267
Aalto University (FI)
Affordable and clean energy
Openalex Percentile: Top 47%
Radiation Effects in Electronics
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