Improved Hydrogen-Sensing of TiO2 Schottky Device Through Schottky Barrier Height Modulation

Adjusting the Schottky barrier height is an important approach to enhancing the gas-sensing performance of TiO₂ Schottky sensors. In this study, micro TiO₂ nanotube Schottky sensors were fabricated via magnetron sputtering and anodic oxidation, with their Schottky barrier height adjusted by varying the annealing temperature. The morphology, phase composition, oxygen vacancy concentration, band structure, and Schottky junction of the samples were investigated using SEM, GIXRD, EPR, Hall effect measurements, XPS, I-V curves, and AC impedance. The sensor annealed at 500 °C demonstrated the highest gas-sensing response, outperforming sensors treated at other temperatures by over 100 times. Its response value to 1 ppm H₂ was 242. The annealing temperature significantly affects the TiO₂ phase and oxygen vacancy concentration, resulting in the highest Schottky barrier height in the 500 °C-annealed sensor, which contributes to its superior sensing performance. AC impedance measurements revealed no significant Fermi-level pinning in TiO₂. Based on the gas-sensing mechanism analysis, the response of the TiO₂ sensor can be divided into three regimes: Schottky junction control, TiO₂ resistance control, and co-control.