Tungsten Oxide Adhesion Layer for Low Resistance Hole Contacts to WSe <sub>2</sub>
The dangling-bond-free surfaces of transition metal dichalcogenides (TMDs) fundamentally challenge the creation of strongly bonded metal contacts. Commonly used interfacial adhesion layers, such as titanium, have unfavorable band alignment to the valence band of TMDs. Here, we introduce tungsten oxide (WO<sub><i>x</i></sub>) as an interfacial adhesion layer for low resistance hole contacts on monolayer WSe<sub>2</sub>. We show that the WO<sub><i>x</i></sub> adhesion layer exhibits a 2-fold increase in adhesion force on both WSe<sub>2</sub> and SiO<sub>2</sub> surfaces compared to the conventional titanium adhesion layer while enabling a low hole contact resistance of R<sub>c</sub> = 0.2 kΩ·μm on monolayer WSe<sub>2</sub>. This work provides a method to facilitate a robust and reliable way to create highly adhesive contacts on atomically smooth TMD surfaces that are suitable for large-scale integration.
Authors
- Yue Liu
- Dorottya Urmossy (ORCID: https://orcid.org/0009-0003-5252-8958)
- Shu Wang
- Kyuho Lee
- Ali Javey
- Naoki Higashitarumizu
- Inha Kim
Institutions
- Lawrence Berkeley National Laboratory (US)
- Kavli Energy NanoScience Institute (US)
- NOAA Chemical Sciences Laboratory (US)
- University of California, Berkeley (US)
Publication Details
- Journal
- Nano Letters
- Published
- 2026-02-23
- DOI
- https://doi.org/10.1021/acs.nanolett.5c06375
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00