Phonon Scattering by Local Off‐Centering in Diamond‐Like Cu <sub>2−X</sub> Ag <sub>x</sub> In <sub>2</sub> Se <sub>4</sub> Chalcopyrites: High Carrier Mobility and Ultralow Thermal Conductivity

Diamond‐like Cu 2−x Ag x In 2 Se 4 ( x = 0–0.3) chalcopyrites were synthesized by arc‐melting and investigated as sustainable, tellurium‐free thermoelectric (TE) materials. Synchrotron X‐ray diffraction reveals that partial Ag substitution induces lattice expansion and local off‐centering distortions within the tetrahedral Cu/Ag‐Se network, resulting in pronounced anisotropic atomic displacement parameters. This dynamic lattice disorder, reminiscent of emphanitic behavior, enhances phonon scattering and drives a marked reduction of the lattice thermal conductivity down to ≈1.25 W m −1 K −1 at 748 K. Despite a moderate carrier concentration (∼10 18 cm −3 ), the alloys maintain high carrier mobility up to 400 cm 2 V −1 s −1 , yielding a power factor of 0.33 mW m −1 K −2 for Cu 1.9 Ag 0.1 In 2 Se 4 . Hybrid‐functional density functional theory calculations confirm progressive bandgap widening with unaltered conduction‐band curvature, consistent with the transport trends. These findings reveal a direct nanoscale structure–property relationship in Ag‐alloyed CuInSe 2 chalcopyrites, where local off‐centering acts as an intrinsic phonon‐scattering mechanism. The work establishes a sustainable, tellurium‐free platform for designing high‐mobility TEs through controlled lattice disorder.

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Publication Details

Journal
Small Structures
Published
2026-02-01
DOI
https://doi.org/10.1002/sstr.202500800
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Phonon Scattering by Local Off‐Centering in Diamond‐Like Cu 2−X Ag x In 2 Se 4 Chalcopyrites: High Carrier Mobility and Ultralow Thermal Conductivity

José J. Plata, Víctor Posligua, Javier Gainza, J. L. Velasco et al.
Small Structures
Advanced Thermoelectric Materials and Devices
article

Phonon Scattering by Local Off‐Centering in Diamond‐Like Cu 2−X Ag x In 2 Se 4 Chalcopyrites: High Carrier Mobility and Ultralow Thermal Conductivity

José J. Plata, Víctor Posligua, Javier Gainza, J. L. Velasco, J. Martı́nez, Antonio M. Márquez, Irene Caro‐Campos, Oscar J. Dura, Norbert M. Nemes, Federico Serrano‐Sanchez, Jesús Prado‐Gonjal
article en

Abstract

Diamond‐like Cu 2−x Ag x In 2 Se 4 ( x = 0–0.3) chalcopyrites were synthesized by arc‐melting and investigated as sustainable, tellurium‐free thermoelectric (TE) materials. Synchrotron X‐ray diffraction reveals that partial Ag substitution induces lattice expansion and local off‐centering distortions within the tetrahedral Cu/Ag‐Se network, resulting in pronounced anisotropic atomic displacement parameters. This dynamic lattice disorder, reminiscent of emphanitic behavior, enhances phonon scattering and drives a marked reduction of the lattice thermal conductivity down to ≈1.25 W m −1 K −1 at 748 K. Despite a moderate carrier concentration (∼10 18 cm −3 ), the alloys maintain high carrier mobility up to 400 cm 2 V −1 s −1 , yielding a power factor of 0.33 mW m −1 K −2 for Cu 1.9 Ag 0.1 In 2 Se 4 . Hybrid‐functional density functional theory calculations confirm progressive bandgap widening with unaltered conduction‐band curvature, consistent with the transport trends. These findings reveal a direct nanoscale structure–property relationship in Ag‐alloyed CuInSe 2 chalcopyrites, where local off‐centering acts as an intrinsic phonon‐scattering mechanism. The work establishes a sustainable, tellurium‐free platform for designing high‐mobility TEs through controlled lattice disorder.

Small StructuresVol. 7(2)
Universidad Complutense de Madrid (ES), European Synchrotron Radiation Facility (FR), Instituto de Ciencia de Materiales de Madrid (ES), University of Castilla-La Mancha (ES), Universidad de Sevilla (ES)
European Commission, European Synchrotron Radiation Facility, Universidad de Granada, Agencia Estatal de Investigación
Responsible consumption and production
Openalex Percentile: Top 49%
Advanced Thermoelectric Materials and Devices
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