Giant Berry‐phase‐Driven X‐Ray Beam Translations in Strain‐Engineered Semiconductor Crystals (Adv. Mater. 11/2026)
Giant X-Ray Beam Translations in Strain-Engineered Crystals In their Research Article (DOI: 10.1002/adma.202513259), Marco Felici and co-workers investigate the Berry-phase X-ray translation effect in strain-engineered, selectively H-irradiated GaAsN/GaAs epilayers. The X-rays impinging on the surface of such deterministically deformed samples are split in several, laterally shifted transmission branches. Beam translations in excess of 100 μm are consistently observed, paving the way towards applications in X-ray photonics and interferometry.
Authors
- Gaetano Campi
- Luisa Barba (ORCID: https://orcid.org/0000-0001-8832-7056)
- Marco Felici (ORCID: https://orcid.org/0000-0002-0977-2301)
- Giorgio Pettinari (ORCID: https://orcid.org/0000-0003-0187-3770)
- Michela Fratini (ORCID: https://orcid.org/0000-0003-3118-4335)
- S. Birindelli
- T. Schülli
- M. Capizzi (ORCID: https://orcid.org/0000-0003-3232-4571)
- A. Polimeni (ORCID: https://orcid.org/0000-0002-2017-4265)
- Silvia Rubini
Institutions
- European Synchrotron Radiation Facility (FR)
- Istituto di Nanotecnologia (IT)
- Istituto Officina dei Materiali (IT)
- Center for Biomolecular Nanotechnologies (IT)
- Fondazione Santa Lucia (IT)
- Institute of Crystallography (IT)
- Sapienza University of Rome (IT)
Publication Details
- Journal
- Advanced Materials
- Published
- 2026-02-01
- DOI
- https://doi.org/10.1002/adma.72361
- Primary Topic
- Crystallography and Radiation Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00