A Symmetric U-Shaped Gate Tunnel FET-ISFET Hybrid Label-Free Biosensor for Highly Sensitive DNA Detection

Ion-Sensitive Field-Effect Transistors (ISFETs) have been extensively used to detect various biomolecules, as the intrinsic charge of these molecules can change the transistor's current or threshold voltage. Recently, realizing ISFET biosensors with better performance has attracted much attention. This paper proposes a novel ISFET biosensor by using the advantage of Tunnel Field-Effect Transistor (TFET). The device characteristics and sensing performance are systematically investigated by Silvaco Atlas TCAD simulations. Due to the novel structural design, the proposed sensor achieves a maximum current sensitivity (<i>S<sub>IDSmax</sub></i>) of 99.99% and a threshold voltage sensitivity (<i>S<sub>VTH</sub></i>) of 124%. To provide optimization guidelines, this work further explored the effect of geometric dimensions and gate dielectric materials on device performance. The excellent performance of the proposed biosensor makes it a promising candidate for future low-power, high-sensitivity biodetection applications.

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Publication Details

Journal
Sensors
Published
2026-02-19
DOI
https://doi.org/10.3390/s26041337
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

A Symmetric U-Shaped Gate Tunnel FET-ISFET Hybrid Label-Free Biosensor for Highly Sensitive DNA Detection

Xiaoli Yang, Yang Li, Shulong Wang, Shupeng Chen et al.
Sensors
Advancements in Semiconductor Devices and Circuit Design
article

A Symmetric U-Shaped Gate Tunnel FET-ISFET Hybrid Label-Free Biosensor for Highly Sensitive DNA Detection

Xiaoli Yang, Yang Li, Shulong Wang, Shupeng Chen, Hongxia Liu, Yourui An, Zhenhao Wen
article en

Abstract

Ion-Sensitive Field-Effect Transistors (ISFETs) have been extensively used to detect various biomolecules, as the intrinsic charge of these molecules can change the transistor's current or threshold voltage. Recently, realizing ISFET biosensors with better performance has attracted much attention. This paper proposes a novel ISFET biosensor by using the advantage of Tunnel Field-Effect Transistor (TFET). The device characteristics and sensing performance are systematically investigated by Silvaco Atlas TCAD simulations. Due to the novel structural design, the proposed sensor achieves a maximum current sensitivity (<i>S<sub>IDSmax</sub></i>) of 99.99% and a threshold voltage sensitivity (<i>S<sub>VTH</sub></i>) of 124%. To provide optimization guidelines, this work further explored the effect of geometric dimensions and gate dielectric materials on device performance. The excellent performance of the proposed biosensor makes it a promising candidate for future low-power, high-sensitivity biodetection applications.

SensorsVol. 26(4)
Chongqing University of Posts and Telecommunications (CN), Xidian University (CN), Xian Central Hospital (CN), Xiangyang Central Hospital (CN), First Hospital of Xi'an (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation
Affordable and clean energy
Openalex Percentile: Top 51%
Advancements in Semiconductor Devices and Circuit Design
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