A Symmetric U-Shaped Gate Tunnel FET-ISFET Hybrid Label-Free Biosensor for Highly Sensitive DNA Detection
Ion-Sensitive Field-Effect Transistors (ISFETs) have been extensively used to detect various biomolecules, as the intrinsic charge of these molecules can change the transistor's current or threshold voltage. Recently, realizing ISFET biosensors with better performance has attracted much attention. This paper proposes a novel ISFET biosensor by using the advantage of Tunnel Field-Effect Transistor (TFET). The device characteristics and sensing performance are systematically investigated by Silvaco Atlas TCAD simulations. Due to the novel structural design, the proposed sensor achieves a maximum current sensitivity (<i>S<sub>IDSmax</sub></i>) of 99.99% and a threshold voltage sensitivity (<i>S<sub>VTH</sub></i>) of 124%. To provide optimization guidelines, this work further explored the effect of geometric dimensions and gate dielectric materials on device performance. The excellent performance of the proposed biosensor makes it a promising candidate for future low-power, high-sensitivity biodetection applications.
Authors
- Xiaoli Yang (ORCID: https://orcid.org/0000-0002-2829-8326)
- Yang Li (ORCID: https://orcid.org/0000-0001-7026-7649)
- Shulong Wang
- Shupeng Chen
- Hongxia Liu
- Yourui An
- Zhenhao Wen
Institutions
- Chongqing University of Posts and Telecommunications (CN)
- Xidian University (CN)
- Xian Central Hospital (CN)
- Xiangyang Central Hospital (CN)
- First Hospital of Xi'an (CN)
Publication Details
- Journal
- Sensors
- Published
- 2026-02-19
- DOI
- https://doi.org/10.3390/s26041337
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation