Fully CMOS‐Compatible 3‐T Embedded NOR Flash Memory Achieving 28 ns Long‐Term Potentiation/Long‐Term Depression for High‐Speed Online Training Accelerators

Neuromorphic Hardware Architectures A novel fully complementary metal–oxide–semiconductor (CMOS)-compatible three-transistor (3-T) embedded flash (eFlash) is proposed for high-speed online training accelerators enabled by 28 ns long-term potentiation (LTP)/long-term depression (LTD) operations. Owing to full CMOS compatibility and high speed, the proposed 3-T eFlash can be a high-performance solution to the neuromorphic hardware. More details can be found in the Research Article by Woo Young Choi and co-workers (DOI: 10.1002/aisy.202500547).