Characterization and simulation of the resistance window variability in Ti/HfO2-based memristors: effect of the Ti layer thickness

• The impact of the t Ti /t HfO2 ratio on the Resistive Switching behavior is analyzed under both voltage ramp and pulsed voltage conditions. • Current distributions across switching cycles are statistically characterized using the fitdistrplus package in R. • The trends and fluctuations in current are identified for different t Ti /t HfO2 ratios. • The Dynamic Memdiode Model is employed to simulate I–V characteristics and cycle-dependent current behavior. • The resistance window magnitude is evaluated through both experimental data and model-based simulations, confirming the model’s predictive accuracy. The low- and high-resistance states in Ti/HfO 2 -based memristors were investigated. The statistical analysis of experimental data was carried out with the aid of the fitdistrplus package for the R language and the obtained results were considered in SPICE simulations using the Dynamic Memdiode Model for resistive switching devices. It was found that devices with a large thickness ratio t Ti /t HfO2 ≥ 0.5 exhibit superior performance in terms of switching stability, variability, and magnitude of the resistance window compared with those with a lower ratio. These observations shed light on the role played by the Ti capping layer in the switching performance of practical memristors, a crucial issue for the potential application of these devices in fields such as information storage and neuromorphic computing.