Advances and Future Challenges in Monolithic 3D Integrated Logic, Power, and Optoelectronics Technologies for Tightly Interconnected Intelligent Systems
The emergence of ultralarge-scale hardware systems for artificial intelligence is driving demand for high-performance heterogeneous integration. At the heart of these systems lies the maximization of computational capability through high data bandwidth, necessitating interconnects that either increase the number of links between tiers and chips or enhance the data transfer rate of each link. Monolithic three-dimensional (M3D) integration, particularly with two-dimensional (2D) materials, offers ultradense intertier vias and multifunctional devices within back-end-of-line-compatible processes, enabling compact vertical stacking of logic and memory. A critical challenge in this architecture is thermal management, requiring cross-layer electro-thermal analysis and codesign with integrated power regulation. In parallel, photonic integrated circuits provide low-latency, energy-efficient interchip communication by overcoming the traditional bandwidth limitation imposed by electrical signal loss, and their advantages become increasingly significant as the communication distance increases. Emerging concepts, including spectrally tunable 2D photodetectors and vertically stacked microlight-emitting-diode-photodiode transceivers, further enhance scalability by eliminating reliance on external lasers. This Review article highlights the convergence of M3D integration, 2D materials, and photonic interconnects, while outlining challenges of material compatibility, process scalability, and system-level codesign that must be addressed to realize a unified framework for next-generation computing and communication systems beyond conventional Si scaling.
Authors
- Joonghoon Choi (ORCID: https://orcid.org/0000-0002-2810-2784)
- Jinkyoung Yoo (ORCID: https://orcid.org/0000-0002-9578-6979)
- Young Jae Song (ORCID: https://orcid.org/0000-0001-6172-3817)
- Heechun Park (ORCID: https://orcid.org/0000-0003-2796-518X)
- Bong Gyu Shin (ORCID: https://orcid.org/0000-0002-5368-2602)
- Hoon Hahn Yoon (ORCID: https://orcid.org/0000-0002-4081-3343)
- Junsu Kim (ORCID: https://orcid.org/0000-0001-9583-7978)
- Yeonjoo Lee (ORCID: https://orcid.org/0000-0003-2096-5160)
- Kibum Kang
- W. Yang
- Jaehyun Lee (ORCID: https://orcid.org/0000-0001-7384-7075)
- Changsoo Kim (ORCID: https://orcid.org/0000-0002-5940-5649)
- J. W. Bae (ORCID: https://orcid.org/0000-0002-8947-0628)
- Hyungwoo Kim (ORCID: https://orcid.org/0000-0002-5727-4892)
- Jae-Hoon Han
- Haksoon Jung (ORCID: https://orcid.org/0000-0003-1567-692X)
- Sang Hyeon Kim
- Jiwook Kwon
- Hanggyo Jung
- Jimin Kwon
- Sungjoo Lee
- Jongwook Jeon
- Gyumin Kim
- Young Joon Hong (ORCID: https://orcid.org/0000-0002-1831-8004)
- Seunghun Baek
- Hyung-Jun Kim
Institutions
- Los Alamos National Laboratory (US)
- Korea Advanced Institute of Science and Technology (KR)
- Samsung (South Korea) (KR)
- Blue Cross and Blue Shield of Kansas City (US)
- Gwangju Institute of Science and Technology (KR)
- Institute of Nanotechnology (GB)
- Center for Integrated Nanotechnologies (US)
- Innovation Team (China) (HK)
- Ulsan National Institute of Science and Technology (KR)
- Korea Institute of Science and Technology (KR)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- ACS Nano
- Published
- 2026-02-18
- DOI
- https://doi.org/10.1021/acsnano.5c15601
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00