Emerging single‐element ferroelectrics: From theory to experiment

Abstract In contrast to multi‐element ferroelectrics with intricate atomic configurations, single‐element ferroelectrics are distinguished by their structural simplicity and low‐dimensional nature. In addition, they have been experimentally verified to display robust ferroelectricity at room temperature. These materials are regarded as promising candidates for next‐generation flexible optoelectronic devices because of their high electrical conductivity and inherent compatibility with integrated circuits, this review systematically elucidates the underlying mechanisms governing the emergence of ferroelectricity in single‐element systems and comprehensively surveys the state‐of‐the‐art fabrication techniques. The fundamental physical properties of several prominent single‐element ferroelectrics including tellurium (Te), bismuth (Bi), and black phosphorus (BP) are discussed, highlighting their applications in memristors and optoelectronic devices. Finally, the current research challenges are addressed and future trends in material development, fabrication techniques, and potential applications are presented. The objective of this review is to provide a comprehensive understanding of single‐element ferroelectrics, offering valuable insights into their potential for broader applications. image