Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices

Integrating two-dimensional (2D) materials into functional electronic devices remains a major challenge, requiring precise, defect-free deposition and patterning techniques. In this work, we present experimental results on the fabrication of heterostructures composed of graphene, PdSe₂, and MoSe₂ using the Laser-Induced Forward Transfer (LIFT) technique. This digital, maskless method enables accurate positioning and shape definition of 2D material pixels with micrometer-scale resolution. We demonstrate the assembly of vertically stacked heterostructures and the fabrication of 2D material-based pn-junctions on Si/SiO₂ substrates, with monolayer graphene serving as the transparent top electrode. The pn-junctions, comprising p-type PdSe₂ and n-type MoSe₂, exhibit consistent and stable electrical performance across multiple devices, with operational voltages ranging from -2 to 2 V. Importantly, the integration of graphene preserves device integrity and functionality. Structural and electrical characterization was performed using Raman spectroscopy, atomic force microscopy (AFM), Scanning electron microscopy (SEM) and field-effect transistor (FET) measurements. High-quality material transfer was confirmed, with mobilities values reaching up to 1200 ± 50 cm²V^- ¹s^- ¹. These results highlight the effectiveness of LIFT for constructing complex 2D heterostructures and emphasize its potential for the scalable fabrication of high-performance electronic and optoelectronic devices.