Tunable Electronic and Optoelectronic Properties of MoS <sub>2</sub> Through Molecular Coverage‐Controlled Polyoxometalate Doping (Adv. Electron. Mater. 4/2026)

2D Transition Metal Dichalcogenides In their Research Article (10.1002/aelm.202500706), Thomas Heine, Anjana Devi, Kirill Monakhov, and co-workers show a lanthanide-phthalocyanine–augmented polyoxovanadate molecule interfacing with a MoS2 layer, with glowing streams representing interfacial charge transfer. This molecular–2D synergy tailors the optical and electronic properties of MoS2, enabling tunable emission and multilevel resistive-memory control, thereby accelerating progress toward molecularly gated ultrathin, low-power neuromorphic device architectures. Art by the team of INMYWORK Studio.

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Publication Details

Journal
Advanced Electronic Materials
Published
2026-02-01
DOI
https://doi.org/10.1002/aelm.70295
Primary Topic
2D Materials and Applications
Type
article
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article

Tunable Electronic and Optoelectronic Properties of MoS 2 Through Molecular Coverage‐Controlled Polyoxometalate Doping (Adv. Electron. Mater. 4/2026)

Marco Moors, Harish Parala, Dmitry A. Ryndyk, Emad Najafidehaghani et al.
Advanced Electronic Materials
2D Materials and Applications
article

Tunable Electronic and Optoelectronic Properties of MoS 2 Through Molecular Coverage‐Controlled Polyoxometalate Doping (Adv. Electron. Mater. 4/2026)

Marco Moors, Harish Parala, Dmitry A. Ryndyk, Emad Najafidehaghani, Nils Boysen, Jean‐Pierre Glauber, Anjana Devi, Ruben Maas, Jonas Lorenz, Thomas Heine, Kirill Monakhov
article en

Abstract

2D Transition Metal Dichalcogenides In their Research Article (10.1002/aelm.202500706), Thomas Heine, Anjana Devi, Kirill Monakhov, and co-workers show a lanthanide-phthalocyanine–augmented polyoxovanadate molecule interfacing with a MoS2 layer, with glowing streams representing interfacial charge transfer. This molecular–2D synergy tailors the optical and electronic properties of MoS2, enabling tunable emission and multilevel resistive-memory control, thereby accelerating progress toward molecularly gated ultrathin, low-power neuromorphic device architectures. Art by the team of INMYWORK Studio.

Advanced Electronic MaterialsVol. 12(4)
Leibniz Institute for Solid State and Materials Research (DE), Fraunhofer Institute for Microelectronic Circuits and Systems (DE), Leibniz Institute of Surface Engineering (DE), Technische Universität Dresden (DE)
Openalex Percentile: Top 53%
2D Materials and Applications
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Tunable Electronic and Optoelectronic Properties of MoS <sub>2</sub> Through Molecular Coverage‐Controlled Polyoxometalate Doping (Adv. Electron. Mater. 4/2026) — Marco Moors, Harish Parala, et al. · Advanced Electronic Materials (2026) | TGRS Research Map | TGRS