Efficient AgInGaS-based QLEDs and full-color displays via uniform silver vacancy distribution

AgInGaS (AIGS) quantum dots (QDs) are promising for displays due to their narrow full width at half maximum (FWHM) and tunable emission. However, nonuniform silver vacancy (<i>V</i>_Ag) distribution causes emission broadening and hinders device performance improvement. Here, we present a multistep temperature control strategy that precisely regulates reaction temperature to control nucleation, cation exchange, and defect reconstruction, thereby enabling uniform <i>V</i>_Ag distribution in AIGS QDs. Simultaneously, we construct a dual-layer shell structure (AgGaS₂/GaS_x), which efficiently passivates surface defects. The synthesized red, green, and blue AIGS QDs achieve photoluminescence quantum yields (92.6, 98.5, and 53.3%) and narrow FWHMs (32, 29, and 21 nm). On the basis of these materials, we fabricated red, green, and blue QD light-emitting diodes that demonstrate external quantum efficiencies of 13.2, 8.0, and 2.9%. Moreover, the interfacial confinement self-assembly strategy enables the fabrication of full-color QD pixel arrays with resolutions up to 2032 pixels per inch, further highlighting the potential of AIGS QDs for near-eye displays.