Efficient and Robust p-Type Transistor Based on Ultrawide-Bandgap Semiconductor
The <i>p</i>-type transistor is an indispensable component of semiconductor technology, enabling a complementary operation with <i>n</i>-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for <i>p</i>-type transistors due to the limited semiconductors with reliable hole transport and their high activation energies. Here, we achieved a robust yet efficient <i>p</i>-type transistor by heterogeneously integrating an ultrawide-bandgap semiconductor and a high-<i>κ</i> dielectric layer through van der Waals integration. The <i>p</i>-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-<i>κ</i> (30.5) SrTiO<sub>3</sub> perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (∼200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm<sup>2</sup>/(V·s) to 572 cm<sup>2</sup>/(V·s)), and high on-off ratio (∼10<sup>9</sup>). Furthermore, tuning the annealing temperature allows operation in either enhancement or depletion mode. The robust <i>p</i>-type transistor with high efficiency holds great potential for future power electronics, ultraviolet (UV) optoelectronics, and harsh-environment electronic applications.
Authors
- Dongchen Qi (ORCID: https://orcid.org/0000-0001-8466-0257)
- S. C. Wang (ORCID: https://orcid.org/0009-0008-5943-6892)
- Alastair Stacey (ORCID: https://orcid.org/0000-0002-3794-0317)
- Yuefeng Yin (ORCID: https://orcid.org/0000-0002-2958-1887)
- David A. Broadway (ORCID: https://orcid.org/0000-0002-7375-8766)
- James A. Belcourt (ORCID: https://orcid.org/0009-0003-9037-4427)
- Shifan Wang (ORCID: https://orcid.org/0000-0002-9866-1434)
- Huiping Han
- Liang Wu (ORCID: https://orcid.org/0000-0003-1030-6997)
- Xing Kx
- Zherui Yang
- Xinmao Yin
- Qingdong Ou
- Xiao Renshaw Wang
- Hang Yin
- Weiyao Zhao
- Jean-Philippe Tetienne
- Sergey Rubanov
- Michael S. Fuhrer
Institutions
- Kunming University of Science and Technology (CN)
- Macau University of Science and Technology (MO)
- Shanghai University (CN)
- Australian National University (AU)
- Queensland University of Technology (AU)
- The University of Melbourne (AU)
- Nanyang Technological University (SG)
- Princeton Plasma Physics Laboratory (US)
- Australian Regenerative Medicine Institute (AU)
- Faculty (United Kingdom) (GB)
- MIT University (MK)
- And Technology Research (United Kingdom) (GB)
- Centre for Biomedical Engineering and Physics (SE)
- Division of Materials Science and Engineering (AU)
- Institute of High Temperature Electrochemistry (RU)
- Macao Polytechnic University (MO)
- Monash University (AU)
- RMIT University (AU)
Publication Details
- Journal
- ACS Nano
- Published
- 2026-02-17
- DOI
- https://doi.org/10.1021/acsnano.5c22605
- Primary Topic
- Electronic and Structural Properties of Oxides
- Type
- article
- Field-Weighted Citation Impact
- 0.00