A critical review of Mg <sub>3</sub> Sb <sub>2</sub> -based thermoelectric materials

Abstract Mg 3 Sb 2 -based materials have emerged as highly promising n -type thermoelectric materials within the medium temperature range (300–800 K), offering a more cost-effective and environmentally benign alternative to conventional telluride-based thermoelectric materials. These materials complement Bi 2 Te 3 -based systems for near-room temperature applications (300–500 K) and PbTe/GeTe/SnTe for medium-temperature ranges (500–800 K). This paper presents a systematic review of recent significant advances in the thermoelectric performance of Mg 3 Sb 2 , achieved through optimized doping and fabrication strategies. It outlines key methodologies and underlying physical mechanisms that contribute to high-performance n -type Mg 3 Sb 2 , discusses challenges associated with device integration, and proposes future research directions.

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Publication Details

Journal
Applied Physics Express
Published
2026-02-01
DOI
https://doi.org/10.35848/1882-0786/ae3ec8
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
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article

A critical review of Mg 3 Sb 2 -based thermoelectric materials

Jincheng Yu, Md All Amin Newton, K HAYASHI, Yuzuru Miyazaki et al.
Applied Physics Express
Advanced Thermoelectric Materials and Devices
article

A critical review of Mg 3 Sb 2 -based thermoelectric materials

Jincheng Yu, Md All Amin Newton, K HAYASHI, Yuzuru Miyazaki, Zhengqin Wang, Zizhuang He, Chen Chen, Jing-Feng Li, Jingwei Li, Hezhang Li, Lu Chen, Chao Wang
article en

Abstract

Abstract Mg 3 Sb 2 -based materials have emerged as highly promising n -type thermoelectric materials within the medium temperature range (300–800 K), offering a more cost-effective and environmentally benign alternative to conventional telluride-based thermoelectric materials. These materials complement Bi 2 Te 3 -based systems for near-room temperature applications (300–500 K) and PbTe/GeTe/SnTe for medium-temperature ranges (500–800 K). This paper presents a systematic review of recent significant advances in the thermoelectric performance of Mg 3 Sb 2 , achieved through optimized doping and fabrication strategies. It outlines key methodologies and underlying physical mechanisms that contribute to high-performance n -type Mg 3 Sb 2 , discusses challenges associated with device integration, and proposes future research directions.

Applied Physics ExpressVol. 19(2)
Tohoku University (JP), Tsinghua University (CN)
Openalex Percentile: Top 54%
Advanced Thermoelectric Materials and Devices
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