Photonic–electronic hybrid microwave source with broadband coverage and ultra-low phase noise

We present a compact optoelectronic microwave source achieving broadband coverage from 1 to 100 GHz with frequency-independent, ultralow phase noise. The system integrates thin‑film lithium niobate modulation with stimulated Brillouin scattering and common mode noise rejection in a high‑Q fiber resonator, enabling a 100 GHz carrier to reach the phase noise level of -111.4 dBc/Hz at 1 kHz and -130.6 dBc/Hz at 10 kHz offset. Then, a 10 GHz signal generated through electrical frequency division and injection locking of a dielectric oscillator is demonstrated, reaching phase noise levels of -84 dBc/Hz at 10 Hz, -124 dBc/Hz at 1 kHz, -138 dBc/Hz at 10 kHz, and -166.43 dBc/Hz at 10 MHz, limited by the noise floor of the synthesizer chip. This architecture overcomes the conventional trade-off between phase noise and carrier frequency, providing a promising solution for advanced communications, radar, and quantum measurements.

Authors

Publication Details

Journal
Optics Letters
Published
2026-02-17
DOI
https://doi.org/10.1364/ol.590838
Primary Topic
Advanced Photonic Communication Systems
Type
article
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article

Photonic–electronic hybrid microwave source with broadband coverage and ultra-low phase noise

Jiahao Hu, Heng Zhou, Siyi Xue, Zhengyuxiao Yang
Optics Letters
Advanced Photonic Communication Systems
article

Photonic–electronic hybrid microwave source with broadband coverage and ultra-low phase noise

Jiahao Hu, Heng Zhou, Siyi Xue, Zhengyuxiao Yang
article en

Abstract

We present a compact optoelectronic microwave source achieving broadband coverage from 1 to 100 GHz with frequency-independent, ultralow phase noise. The system integrates thin‑film lithium niobate modulation with stimulated Brillouin scattering and common mode noise rejection in a high‑Q fiber resonator, enabling a 100 GHz carrier to reach the phase noise level of -111.4 dBc/Hz at 1 kHz and -130.6 dBc/Hz at 10 kHz offset. Then, a 10 GHz signal generated through electrical frequency division and injection locking of a dielectric oscillator is demonstrated, reaching phase noise levels of -84 dBc/Hz at 10 Hz, -124 dBc/Hz at 1 kHz, -138 dBc/Hz at 10 kHz, and -166.43 dBc/Hz at 10 MHz, limited by the noise floor of the synthesizer chip. This architecture overcomes the conventional trade-off between phase noise and carrier frequency, providing a promising solution for advanced communications, radar, and quantum measurements.

Optics LettersVol. 51(6)
Affordable and clean energy
Openalex Percentile: Top 53%
Advanced Photonic Communication Systems
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