Multi‐Physical Field Modulated P‐Bit Device Based on VO ₂ Thin Film

Probabilistic computation using probability bits (P-bits) is highly effective for combinatorial optimization problems such as integer factorization because of its fast search ability. However, implementing P-bits with traditional complementary metal-oxide-semiconductor (CMOS) technology usually needs external noise for randomness, which complicates fabrication and system integration. To overcome these challenges, we have proposed a VO₂-based P-bit device where synergistic multi-physical field modulation (electric, thermal, optical) enables real-time tunability of randomness-an obvious advance beyond previous P-bits, which rely primarily on single-field control. This P-bit provides excellent durability and inherent randomness, with output probability that can be adjusted via multi-physical field modulation. Besides introducing a new phase-change material-based device approach for high-performance P-bits, this study also demonstrates a synergistic multi-physical field modulation strategy that opens new opportunities for neuromorphic device applications.