Charge transport in carbon nanotube field-effect transistors: foundations for carbon-based nanoelectronics

Abstract Carbon nanotube field-effect transistors (CNTFETs) have emerged as promising candidates to overcome the scaling limits of silicon (Si)-based devices, owing to their quasi-one-dimensional (1D) geometry, high carrier mobility, strong gate electrostatics, and compatibility with flexible platforms. To unlock their full application potential, a robust and predictive theoretical framework for carbon-based nanoelectronics is urgently needed. This review systematically analyzes the charge transport mechanisms in CNTFETs across multiple structural levels, from single tubes to aligned arrays and random network films, and elucidates how contact resistance, gate modulation, and channel morphology collectively govern device performance. Through comparison with current sub-5-nm node technologies, CNTFETs demonstrate remarkable potential in electrical performance, along with strong prospects for functional diversification and heterogeneous integration, positioning them as promising candidates for broad applications in the post-Moore era. Despite the encouraging progress achieved so far, significant challenges remain in standardized characterization, interface and contact engineering, and the development of dedicated electronic design automation (EDA) tools. Addressing these issues requires the co-development of advanced modeling tools, precise interface control, and system-level integration. This review provides a comprehensive foundation to guide the transition of CNTFETs from fundamental research toward scalable, next-generation electronic technologies.