Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

ABSTRACT This study investigates the low‐power control of resistance switching transitions in memristive devices described through a single state variable. A unique yet general approach, enabling to derive the most energy‐efficient protocols for programming their resistances, is proposed. This low‐power control paradigm is applied to a couple of differential algebraic equation sets, capturing the nonlinear dynamics of voltage‐controlled devices. Depending upon intrinsic physical properties of a memristive device, captured in the model formulas and parameter setting, and upon constraints on programming time and operating voltages, the optimal protocol may require the application of either a single square voltage pulse of height set to a certain level within the admissible range across a certain fraction of the programming time or some more involved voltage stimulus of unique polarity, including trains of square voltage pulses of different heights, over the entire programming time. The practical implications of these research findings are significant, as the development of energy‐efficient protocols to program memristive devices is a subject under intensive and extensive studies across the academic community and industry.