940-nm VCSELs grown by molecular beam epitaxy on Ge(001)

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Journal
SPIRE - Sciences Po Institutional REpository
Published
2026-01-19
Primary Topic
Semiconductor Lasers and Optical Devices
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article
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article

940-nm VCSELs grown by molecular beam epitaxy on Ge(001)

Wlodek Strupinski, Léo Bourdon, Guilhem Almuneau, Karim Ben Saddik et al.
SPIRE - Sciences Po Institutional REpository
Semiconductor Lasers and Optical Devices
article

940-nm VCSELs grown by molecular beam epitaxy on Ge(001)

Wlodek Strupinski, Léo Bourdon, Guilhem Almuneau, Karim Ben Saddik, Richard Monflier, Alexandre Arnoult, Stéphane Calvez
article en

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SPIRE - Sciences Po Institutional REpository
Openalex Percentile: Top 55%
Semiconductor Lasers and Optical Devices
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940-nm VCSELs grown by molecular beam epitaxy on Ge(001) — Wlodek Strupinski, Léo Bourdon, et al. · SPIRE - Sciences Po Institutional REpository (2026) | TGRS Research Map | TGRS