Pulsed Laser Deposition of Mixed Sn@SnOx Phases Under Different Pressures of Reactive Oxygen Environments

Tin oxide thin films were deposited by the pulsed laser ablation of a metallic Sn target at different oxygen partial pressures, ranging from 10 to 40 mTorr. Langmuir plasma probe diagnostics were performed to evaluate the effect of pressure on mean kinetic energy and density of Sn ions. It was observed that the mean kinetic energy decreased from 34 to 11 eV while the ion density decreased from 10 to 1.5 × 1013 cm−3 with increasing pressure. The films exhibited enhanced optical transmittance, increasing from 10% for the sample grown at 10 mTorr to 70% for the film deposited at 40 mTorr. Furthermore, higher deposition pressures led to wider band gap values, increasing from 1.6 to 3.9 eV for direct transitions and from 2.2 to 3.2 eV for indirect transitions with increasing oxygen pressure. These trends are consistent with progressive oxidation and partial transparency characteristic of semiconducting tin oxides. Structural characterization, based on X-ray diffraction, revealed predominantly metallic Sn diffraction peaks across the entire oxygen pressure range. However, despite this structural signature, the films exhibited optical and electronic properties characteristic of tin oxides. This apparent discrepancy suggests the coexistence of metallic nanoparticles embedded within an amorphous or nanocrystalline SnO2/SnOx matrix. These findings provide insights into the non-equilibrium oxidation dynamics of tin and the formation of metastable SnOx phases during pulsed laser deposition.