Metal surface passivation in semiconductor processing of Mo, W, TiN/TiSiN, and Cu: emerging strategies for corrosion and etching control

Wet cleaning, a critical step in semiconductor manufacturing, is essential for device reliability but can induce metal corrosion due to the aggressive chemical solutions used, becoming a primary cause of yield degradation. As device miniaturization and the complexity of 3D structures advance, the use of nanometer-scale metal thin films and dissimilar metal junctions has become commonplace, further increasing the importance of corrosion control. This review systematically examines the corrosion mechanisms and state-of-the-art passivation strategies for key metallic materials—molybdenum (Mo), titanium-based nitrides, tungsten (W), and copper (Cu)—that critically influence the performance and reliability of next-generation semiconductor devices. For each metal, a wide range of corrosion control technologies are discussed, from chemical inhibitors based on organic compounds and amino acids to advanced techniques such as graphene and ceramic nanocoating, film quality control using Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD), interface engineering strategies like hydrothermal oxidation (HTO), self-passivation, and innovative strategies like self-healing and metal–organic framework (MOF)-based hybrid coatings. This paper demonstrates that a multifaceted approach combining chemical inhibition with the formation of physical protective barriers is a key strategy for ensuring the interfacial stability of metals and enhancing device reliability in next-generation semiconductor processes.