Design and analysis of nanocrystalline core for low-temperature-rise anode saturable reactor

High-voltage direct current transmission relies critically on the anode saturable reactor (ASR) for thyristor protection. To address the reliability limitation caused by ASR temperature rise, this paper proposes a nanocrystalline core design. Through analysis of soft magnetic materials, nanocrystalline alloy is selected for its low loss and robust mechanical properties. A volt-second compensation principle is applied, increasing the core cross-sectional area by 1.38 times to maintain saturation time, while a 13-segment configuration enhances heat dissipation. Coupled field-circuit and multiphysics simulations confirm that the optimized ASR preserves key electrical characteristics including saturation time and current rise rate, while reducing total loss by 66.6% and average steady-state temperature by 29.9%. The design effectively resolves the thermal bottleneck, enabling high-reliability and low-temperature-rise operation.

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Publication Details

Journal
AIP Advances
Published
2026-02-01
DOI
https://doi.org/10.1063/9.0001028
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

Design and analysis of nanocrystalline core for low-temperature-rise anode saturable reactor

Zuoquan Mo, Xuzhe Li, Jingwen Hou, H. Zhou et al.
AIP Advances
Silicon Carbide Semiconductor Technologies
article

Design and analysis of nanocrystalline core for low-temperature-rise anode saturable reactor

Zuoquan Mo, Xuzhe Li, Jingwen Hou, H. Zhou, Yifan Wang, Jiaxin Yuan
article en

Abstract

High-voltage direct current transmission relies critically on the anode saturable reactor (ASR) for thyristor protection. To address the reliability limitation caused by ASR temperature rise, this paper proposes a nanocrystalline core design. Through analysis of soft magnetic materials, nanocrystalline alloy is selected for its low loss and robust mechanical properties. A volt-second compensation principle is applied, increasing the core cross-sectional area by 1.38 times to maintain saturation time, while a 13-segment configuration enhances heat dissipation. Coupled field-circuit and multiphysics simulations confirm that the optimized ASR preserves key electrical characteristics including saturation time and current rise rate, while reducing total loss by 66.6% and average steady-state temperature by 29.9%. The design effectively resolves the thermal bottleneck, enabling high-reliability and low-temperature-rise operation.

AIP AdvancesVol. 16(2)
Wuhan University (CN)
Affordable and clean energy
Openalex Percentile: Top 56%
Silicon Carbide Semiconductor Technologies
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