Thickness-Dependent Opto-Structural Properties of CuBiSe2 Films
Abstract Bulk CuBiSe 2 was prepared by direct fusion of the constituent elements and was found to be thermally stable up to 620°C. X-ray photoelectron spectroscopy was used to determine the chemical composition of the synthesized CuBiSe 2 , and x-ray diffraction (XRD) confirmed its polycrystalline nature. CuBiSe 2 thin films with thicknesses ranging from 30 nm to 122 nm were deposited using a thermal evaporation technique. The XRD patterns of the films exhibited a nanostructure profile. Thermogravimetric analysis (TG) revealed a crystallization temperature and melting point of 570°C and 620°C, respectively. The morphology and surface roughness of the CuBiSe 2 films were investigated using high-resolution transmission electron microscopy and atomic force microscopy. The optical functions were calculated from the transmittance and reflectance spectra of the CuBiSe 2 films, and a direct transition was found to be dominant. In addition, a single-oscillator model was found to be suitable for extracting the dispersion parameters. Overall, the results indicate that CuBiSe 2 thin films hold significant potential as effective absorber layers in optoelectronic applications.
Authors
- Ahmed F. Mabied (ORCID: https://orcid.org/0000-0002-1732-6280)
- Mai F. M. Hmamm (ORCID: https://orcid.org/0000-0003-0409-2427)
- E. M. El-Menyawy
- A. R. Shalaby
- I. T. Zedan
Institutions
- Beni-Suef University (EG)
- National Research Centre (EG)
- Egyptian Russian University (EG)
Publication Details
- Journal
- Journal of Electronic Materials
- Published
- 2026-02-13
- DOI
- https://doi.org/10.1007/s11664-025-12660-6
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Science and Technology Development Fund