Thickness-Dependent Opto-Structural Properties of CuBiSe2 Films

Abstract Bulk CuBiSe 2 was prepared by direct fusion of the constituent elements and was found to be thermally stable up to 620°C. X-ray photoelectron spectroscopy was used to determine the chemical composition of the synthesized CuBiSe 2 , and x-ray diffraction (XRD) confirmed its polycrystalline nature. CuBiSe 2 thin films with thicknesses ranging from 30 nm to 122 nm were deposited using a thermal evaporation technique. The XRD patterns of the films exhibited a nanostructure profile. Thermogravimetric analysis (TG) revealed a crystallization temperature and melting point of 570°C and 620°C, respectively. The morphology and surface roughness of the CuBiSe 2 films were investigated using high-resolution transmission electron microscopy and atomic force microscopy. The optical functions were calculated from the transmittance and reflectance spectra of the CuBiSe 2 films, and a direct transition was found to be dominant. In addition, a single-oscillator model was found to be suitable for extracting the dispersion parameters. Overall, the results indicate that CuBiSe 2 thin films hold significant potential as effective absorber layers in optoelectronic applications.

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Publication Details

Journal
Journal of Electronic Materials
Published
2026-02-13
DOI
https://doi.org/10.1007/s11664-025-12660-6
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

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article

Thickness-Dependent Opto-Structural Properties of CuBiSe2 Films

Ahmed F. Mabied, Mai F. M. Hmamm, E. M. El-Menyawy, A. R. Shalaby et al.
Journal of Electronic Materials
Chalcogenide Semiconductor Thin Films
article

Thickness-Dependent Opto-Structural Properties of CuBiSe2 Films

Ahmed F. Mabied, Mai F. M. Hmamm, E. M. El-Menyawy, A. R. Shalaby, I. T. Zedan
article en

Abstract

Abstract Bulk CuBiSe 2 was prepared by direct fusion of the constituent elements and was found to be thermally stable up to 620°C. X-ray photoelectron spectroscopy was used to determine the chemical composition of the synthesized CuBiSe 2 , and x-ray diffraction (XRD) confirmed its polycrystalline nature. CuBiSe 2 thin films with thicknesses ranging from 30 nm to 122 nm were deposited using a thermal evaporation technique. The XRD patterns of the films exhibited a nanostructure profile. Thermogravimetric analysis (TG) revealed a crystallization temperature and melting point of 570°C and 620°C, respectively. The morphology and surface roughness of the CuBiSe 2 films were investigated using high-resolution transmission electron microscopy and atomic force microscopy. The optical functions were calculated from the transmittance and reflectance spectra of the CuBiSe 2 films, and a direct transition was found to be dominant. In addition, a single-oscillator model was found to be suitable for extracting the dispersion parameters. Overall, the results indicate that CuBiSe 2 thin films hold significant potential as effective absorber layers in optoelectronic applications.

Journal of Electronic MaterialsVol. 55(4)
Beni-Suef University (EG), National Research Centre (EG), Egyptian Russian University (EG)
Science and Technology Development Fund
Openalex Percentile: Top 56%
Chalcogenide Semiconductor Thin Films
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