A Rapid Small‐Signal Modeling Technique for GaN HEMTs With Harris Hawks Optimization

ABSTRACT This paper proposes a Harris Hawks Optimization (HHO)‐based approach for rapid small‐signal modeling of GaN high electron mobility transistors. It pioneers the application of HHO to efficiently construct 19‐element equivalent circuit models over the 0.1–40 GHz broadband. To address challenges including strong parasitic/intrinsic parameter coupling in high‐dimensional space, broadband accuracy imbalance of conventional fitness functions, and parameter magnitude disparities, key innovations are introduced: sequential optimization of grouped parameters for decoupling, physical constraints for integrated circuits, parameter normalization, and a frequency‐weighted fitness function. Experimental results demonstrate that the proposed method achieves 34.4% CPU time reduction with 16.1% higher accuracy in parasitic parameter extraction compared with conventional optimization methods, while outperforming genetic algorithm and particle swarm optimization algorithm in intrinsic parameter optimization with faster convergence, lower error, and no requirement for manual parameter tuning. Close agreement between measured and modeled S ‐parameters across 0.1–40 GHz validates the methodology's effectiveness.