Active Elements of Optical Phase Shifters Based on Thin Ge2Sb2Se4Te, Sb2Se3, and Bi2Se3 Films

The phase shift of an optical beam in free space due to the formation of a crystal structure in controlled elementary cells based on thin films of phase-change materials Ge 2 Sb 2 Se 4 Te, Sb 2 Se 3 , and Bi 2 Se 3 under the control effect of pulsed laser radiation has been experimentally studied. The change in the phase of the studied optical beam passing through a controlled cell of phase-changing material relative to the control beam in a Jamin interferometer has been demonstrated. The phase shift has been estimated using analytical expressions.