E _F ‐Engineering of Mo‐Sn‐Zn‐S Hollow Nanorods for Enhanced Ion/Electron Migration in Sodium‐Ion Storage

ABSTRACT The design of efficient electrode nanomaterials for energy devices necessitates precise control over their electronic properties. Achieving this requires accurate manipulation of the Fermi level ( E F ) through modulation of the electronic band structure, a strategy referred as E F ‐engineering. Herein, designing of hollow nanorods (Mo‐Sn‐Zn‐S Hollow Nanorods, designated as MSZS) of Zn and S dual vacancies (V Zn+S ) incorporated MoS 2 composite is introduced, where the larger cationic sizes of Zn and Sn than that of Mo induce V Zn+S and subsequently lattice expansion to achieve precise E F ‐engineering. These defects significantly enhance the material's electrical and ionic conductivity. Besides, the novel hollow structure of MSZS offers large sodium‐ion migration channels with a low sodium‐ion diffusion kinetic barrier, making the MSZS as a promising anode material for sodium‐ion batteries (SIBs). Therefore, the novel V Zn+S incorporated MSZS anode delivers a high capacity of 854 mAh g −1 at 0.5 C (99.14% retention after 100 cycles), and a superior high‐rate stability of 614 mAh g −1 at 4 C (82.3% retention after 500 cycles). The synergy of defects, hollow morphology, and E F engineering contributes to its performance, inspiring the design of precisely engineered electrodes for advanced energy storage.