A Review: Laser Annealing of Active SiC and Its Applications

SiC is a highly promising semiconductor material for devices operating in extreme environments, owing to its excellent electrical performance, high thermal conductivity, and wide bandgap. Laser annealing offers significant advantages over traditional annealing methods by enabling precise control over the thermal energy distribution while minimizing unwanted thermal effects on adjacent materials. This technique is particularly effective in improving the electrical properties of SiC-based devices, particularly in the activation of dopants and crystallization of amorphous SiC films. This review article explores the application of laser annealing in enhancing the optical and electrical properties of silicon carbide (SiC), with a specific focus on recent advancements in the field and their impact on MEMS and microelectronics. Furthermore, the review covers various laser annealing methods, including excimer and Nd:YAG lasers, to enhance the performance of SiC-based power devices, Schottky diodes, and metal-oxide semiconductor field-effect transistors (MOSFETs). Key challenges in achieving uniform annealing, minimizing surface damage, and optimizing energy density are also discussed. Moreover, the article highlights emerging MEMS applications of laser annealing, such as ohmic contacts, high-temperature electronics, and efficient photovoltaic systems. Ultimately, laser annealing has proven to be a valuable technique for advancing SiC technology, with future research expected to expand its potential applications in the semiconductor industry.