Agar-Based Resistive Switching Memory for Neuromorphic Applications

With the growing demand for sustainable and brain-inspired electronics, biobased resistive random-access memory (Bio-RRAM) has emerged as a promising alternative to conventional inorganic devices. However, most reported Bio-RRAMs still suffer from formation requirements, unstable ON/OFF ratios, or complex hybrid structures, limiting their practical use in neuromorphic computing. Here, we demonstrate a potassium-doped agar Bio-RRAM that overcomes these challenges through a simple, fully biodegradable design. The optimized device achieves forming-free bipolar switching, a stable ON/OFF ratio over 10³, stable and reproducible switching cycles, and retention beyond 10⁴ s. More importantly, the device also exhibits synaptic plasticity behaviors, including potentiation, depression, paired-pulse facilitation and depression, and multilevel conductance states, highlighting its feasibility for neuromorphic computing. These findings demonstrate that agar-based bioelectronics can serve as a promising route toward next-generation sustainable memory systems.