Fluorinated Copper Phthalocyanine as Interfacial Bridges for High Power Factor n-Type Ta <sub>4</sub> SiTe <sub>4</sub> /F <sub> <i>x</i> </sub> CuPc/PVDF Flexible Thermoelectric Composites

The rapid development of flexible electronics has attracted a growing interest in flexible thermoelectric materials. Against this background, the development of ternary organic-inorganic composites represents a promising route for improving the thermoelectric (TE) performance and flexibility of materials, especially in systems incorporating one-dimensional (1D) whiskers. Ta<sub>4</sub>SiTe<sub>4</sub>, a recently identified 1D material, displays exceptional electronic transport properties. However, its composite with insulating poly(vinylidene fluoride) (PVDF) suffers from limited carrier transport. In this study, fluorinated copper phthalocyanines (F<sub><i>x</i></sub>CuPc) are introduced to fabricate n-type Ta<sub>4</sub>SiTe<sub>4</sub>/F<sub><i>x</i></sub>CuPc/PVDF ternary composite films. Characterizations confirm the formation of the F<sub><i>x</i></sub>CuPc-Ta<sub>4</sub>SiTe<sub>4</sub> nanointerface. With increasing fluorine substitution, the energy levels of F<sub><i>x</i></sub>CuPc shift downward and F<sub>16</sub>CuPc exhibits a conduction band edge slightly lower than that of Ta<sub>4</sub>SiTe<sub>4</sub>, enabling efficient electron transfer at the interface and serving as an effective charge transport bridge between adjacent whiskers. This interfacial design simultaneously enhances the electrical conductivity by lowering the contact barrier and increases the Seebeck coefficient through mild carrier concentration modulation and energy-filtering effects. The optimized 50 wt % Ta<sub>4</sub>SiTe<sub>4</sub>/F<sub>16</sub>CuPc/PVDF composite film exhibits a 50% enhancement in electrical conductivity over the binary 50 wt % Ta<sub>4</sub>SiTe<sub>4</sub>/PVDF film, together with a moderate increase in the Seebeck coefficient. Consequently, a maximum power factor of 385.9 μW m<sup>-1</sup> K<sup>-2</sup> is achieved at 5% F<sub>16</sub>CuPc loading, representing a nearly 50% enhancement compared to the binary 50 wt % Ta<sub>4</sub>SiTe<sub>4</sub>/PVDF composite (255.6 μW m<sup>-1</sup> K<sup>-2</sup>). This work demonstrates an effective molecular design strategy for optimizing carrier transport in organic-inorganic hybrid films toward high-performance flexible thermoelectric applications.

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Journal
ACS Applied Materials & Interfaces
Published
2026-02-11
DOI
https://doi.org/10.1021/acsami.5c23290
Primary Topic
Advanced Thermoelectric Materials and Devices
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article
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Fluorinated Copper Phthalocyanine as Interfacial Bridges for High Power Factor n-Type Ta 4 SiTe 4 /F x CuPc/PVDF Flexible Thermoelectric Composites

Sanyin Qu, Qin YAO, Ming Chen, Chenyu Ye et al.
ACS Applied Materials & Interfaces
Advanced Thermoelectric Materials and Devices
article

Fluorinated Copper Phthalocyanine as Interfacial Bridges for High Power Factor n-Type Ta 4 SiTe 4 /F x CuPc/PVDF Flexible Thermoelectric Composites

Sanyin Qu, Qin YAO, Ming Chen, Chenyu Ye, Tongwei Ren, Pengfei Qiu, Pengan Zong, Miao Liu
article en

Abstract

The rapid development of flexible electronics has attracted a growing interest in flexible thermoelectric materials. Against this background, the development of ternary organic-inorganic composites represents a promising route for improving the thermoelectric (TE) performance and flexibility of materials, especially in systems incorporating one-dimensional (1D) whiskers. Ta<sub>4</sub>SiTe<sub>4</sub>, a recently identified 1D material, displays exceptional electronic transport properties. However, its composite with insulating poly(vinylidene fluoride) (PVDF) suffers from limited carrier transport. In this study, fluorinated copper phthalocyanines (F<sub><i>x</i></sub>CuPc) are introduced to fabricate n-type Ta<sub>4</sub>SiTe<sub>4</sub>/F<sub><i>x</i></sub>CuPc/PVDF ternary composite films. Characterizations confirm the formation of the F<sub><i>x</i></sub>CuPc-Ta<sub>4</sub>SiTe<sub>4</sub> nanointerface. With increasing fluorine substitution, the energy levels of F<sub><i>x</i></sub>CuPc shift downward and F<sub>16</sub>CuPc exhibits a conduction band edge slightly lower than that of Ta<sub>4</sub>SiTe<sub>4</sub>, enabling efficient electron transfer at the interface and serving as an effective charge transport bridge between adjacent whiskers. This interfacial design simultaneously enhances the electrical conductivity by lowering the contact barrier and increases the Seebeck coefficient through mild carrier concentration modulation and energy-filtering effects. The optimized 50 wt % Ta<sub>4</sub>SiTe<sub>4</sub>/F<sub>16</sub>CuPc/PVDF composite film exhibits a 50% enhancement in electrical conductivity over the binary 50 wt % Ta<sub>4</sub>SiTe<sub>4</sub>/PVDF film, together with a moderate increase in the Seebeck coefficient. Consequently, a maximum power factor of 385.9 μW m<sup>-1</sup> K<sup>-2</sup> is achieved at 5% F<sub>16</sub>CuPc loading, representing a nearly 50% enhancement compared to the binary 50 wt % Ta<sub>4</sub>SiTe<sub>4</sub>/PVDF composite (255.6 μW m<sup>-1</sup> K<sup>-2</sup>). This work demonstrates an effective molecular design strategy for optimizing carrier transport in organic-inorganic hybrid films toward high-performance flexible thermoelectric applications.

ACS Applied Materials & InterfacesVol. 18(7)
Nanjing Tech University (CN), Chinese Academy of Sciences (CN), Division of Materials Science and Engineering (AU), Shanghai Institute of Ceramics (CN), State Key Laboratory of High Performance Ceramics and Superfine Microstructure
Affordable and clean energy
Openalex Percentile: Top 60%
Advanced Thermoelectric Materials and Devices
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