An Analogue Memristor Based on Conjugated Porous Polymer Composite for Artificial Synapse

Artificial synapses have emerged as a pivotal technological advancement in mimicking brain functions. Organic memristors are desirable for hardware implementation of artificial synapses, owing to their remarkable mechanical flexibility, high biocompatibility at cell-device interfaces, and adjustable material structure. Developing appropriate organic polymers with carbon dots modification will enable the memristor to possess analog-type resistive switching behavior, crucial for realizing brain-like associative learning and adapting dynamic variations of neuron connection strength. In this work, an artificial synapse based on the analogue organic memristor integrating neuromorphic computing and neural interface functions is proposed, utilizing synthetic conjugated porous polymers to construct composites with boron-doped carbon dots. The structure-property relationship of alkynyl and alkyl chains in polymers is elucidated, alongside the synergistic effect of local photoinduced redox and hole templating in composites that endows the device with analog-type resistive switching behavior. Moreover, the memristor presents impressive synaptic plasticity and associative memory learning potential for neuromorphic computing, and further serves as a core unit in flexible artificial neural interface chips, demonstrating dynamic information transmission with neural systems. This study will promote the further development of organic artificial synapses for neuromorphic computing and brain-machine interfaces.