Silicon nitride integrated electro-optic absorption modulator

Silicon nitride (SiN) is currently the most prominent platform for photonics in the visible and near-IR wavelength bandwidth. However, realizing fast electro-optic modulators, the key components of any integrated optics platform remain challenging in SiN. Recently, transparent conductive oxides have emerged as a promising platform for photonic integrated circuits. In this work, we take an important step toward combining the advantages of both platforms, reporting for the high-speed indium tin oxide electro-optic modulators based on silicon nitride waveguides. We demonstrate a bandwidth higher than 1 GHz, 9.3-μm-length active element, and an insertion loss of 5.7 dB for a 300 nm-thickness SiN waveguide platform. Simulation results of optimized device designs indicate that further improvements are possible, offering promising opportunities for silicon nitride photonic integrated circuit platform combined with indium oxide-based layers.

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Publication Details

Journal
Applied Physics Letters
Published
2026-02-09
DOI
https://doi.org/10.1063/5.0293940
Primary Topic
Photonic and Optical Devices
Type
article
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article

Silicon nitride integrated electro-optic absorption modulator

Olga S. Sorokina, Ilya A. Ryzhikov, Aleksandr S. Baburin, Kirill A. Buzaverov et al.
Applied Physics Letters
Photonic and Optical Devices
article

Silicon nitride integrated electro-optic absorption modulator

Olga S. Sorokina, Ilya A. Ryzhikov, Aleksandr S. Baburin, Kirill A. Buzaverov, D.P. Kulikova, Ilya A. Rodionov, A. V. Dorofeenko, Sergey S. Avdeev, Victor I. Polozov, Sergey V. Bukatin, Aleksey B. Kramarenko, Yuri V. Panfilov, Eugeny S. Andrianov, Evgeniy Lotkov, Eugeny D. Chubchev, Alexander V. Baryshev, Ali Sh. Amiraslanov, Evgeny V. Sergeev
article en

Abstract

Silicon nitride (SiN) is currently the most prominent platform for photonics in the visible and near-IR wavelength bandwidth. However, realizing fast electro-optic modulators, the key components of any integrated optics platform remain challenging in SiN. Recently, transparent conductive oxides have emerged as a promising platform for photonic integrated circuits. In this work, we take an important step toward combining the advantages of both platforms, reporting for the high-speed indium tin oxide electro-optic modulators based on silicon nitride waveguides. We demonstrate a bandwidth higher than 1 GHz, 9.3-μm-length active element, and an insertion loss of 5.7 dB for a 300 nm-thickness SiN waveguide platform. Simulation results of optimized device designs indicate that further improvements are possible, offering promising opportunities for silicon nitride photonic integrated circuit platform combined with indium oxide-based layers.

Applied Physics LettersVol. 128(6)
Bauman Moscow State Technical University (RU), All Russia Research Institute of Automatics (RU), Institute of Theoretical and Applied Electrodynamics (RU)
Industry, innovation and infrastructure
Openalex Percentile: Top 60%
Photonic and Optical Devices
DOISourceOpenAlex
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Silicon nitride integrated electro-optic absorption modulator — Olga S. Sorokina, Ilya A. Ryzhikov, et al. · Applied Physics Letters (2026) | TGRS Research Map | TGRS