Microanalysis of β-(AlxGa1−x)2O3 Films Grown by MOCVD
A combined microanalysis and optical study of β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> films grown on sapphire via metalorganic chemical vapour deposition, with thickness 350-1000 nm and Al fraction (x) from 0% to 45%, is presented. Al incorporation in the films showed a linear relation with nominal Al composition calculated from precursor flow rate, and the optical bandgap increased from 4.96 eV to 5.44 eV with a bowing parameter of 1.7 ± 0.5 eV. A high Al fraction led to reduced crystallinity, increased surface roughness, and diminished cathodoluminescence intensity. The topography revealed elongated surface features that evolved with Al content, and luminescence spectra exhibited a blueshift in peak emission attributed to the widening of the bandgap. These findings highlight the trade-off between bandgap tuning and material quality, informing future growth strategies for future electronic and optical devices.
Authors
- Lewis Penman (ORCID: https://orcid.org/0000-0002-0147-9995)
- Fabien Massabuau (ORCID: https://orcid.org/0000-0003-1008-1652)
- R. I. Martin
- Arpit Nandi (ORCID: https://orcid.org/0000-0003-1160-8655)
- Sai Charan Vanjari
- Mark Smith (ORCID: https://orcid.org/0000-0002-0313-5723)
- Mugove Maruzane
- Sean Douglas
- Indraneel Sanyal
- Martin Kuball
Institutions
- University of Strathclyde (GB)
- University of Bristol (GB)
- Scottish Universities Physics Alliance (GB)
Publication Details
- Journal
- Materials
- Published
- 2026-02-10
- DOI
- https://doi.org/10.3390/ma19040672
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Royal Academy of Engineering
- Engineering and Physical Sciences Research Council