Josephson junctions with semiconductor barriers doped by metal

Thin-film MoRe–Si(W)–MoRe junctions were fabricated by magnetron sputtering of targets in an argon atmosphere, followed by deposition of thin films through metal masks on polycrystalline aluminum oxide (polycor) substrates or on sapphire substrates. In order to study the distribution of transparencies in the formed Si(W) barrier, the model of multiple Andreev reflections was used, within the framework of which the quasiparticle current-voltage characteristics of the junctions were calculated and compared with the experimental ones.